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  • Samsung DDR5-RDIMM memory module, M321RBGA0B40-CWK, 256GB, 4800 Mbps, 1.1V, low energy memory
  • Samsung DDR5-RDIMM memory module, M321RBGA0B40-CWK, 256GB, 4800 Mbps, 1.1V, low energy memory


M321RBGA0B40-CWK - Samsung DDR5-RDIMM-256GB-8R x 4-4800 Mbps -1.1 V-288- (4H 3DS 16G x 4) x 40
Key Features
This memory module is Samsung's latest DDR5-RDIMM product, with a 256GB storage capacity and 8R x 4 storage channels, and a memory transfer speed of up to 4800 Mbps. The memory module adopts a low-power 1.1V voltage, which can significantly reduce electrical energy consumption and heat release, and has higher stability and reliability.
The M321RBGA0B40-CWK memory module also has a 288 physical size and a 4H 3DS 16G x 4 chip layout, which can support higher data transfer speeds and faster computer processing tasks. This memory module is suitable for high performance computer servers, processing large graphics, video rendering, virtual machines and other applications with high memory requirements.


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With the continuous development of information technology, the performance requirements of computers are becoming increasingly high, and memory is an important component of computer performance. I believe everyone has a slight understanding of memory. DDR4 has ended its position, while DDR5, as the latest memory technology, is gradually becoming popular. Recently, Samsung has launched a DDR5-RDIMM memory module: M321RBGA0B40-CWK

Firstly, let's take a look at the technical parameters of the memory module. The storage capacity of this memory is 256GB, with an extremely fast memory transfer speed of up to 4800 Mbps, and the working voltage of the memory is less than or equal to 1.1V, achieving low energy consumption. The memory module adopts an 8R x 4 storage channel structure and uses a 4H 3DS 16G x 4 memory particle combination method, thereby improving the density and stability of the memory. There are a total of 40 particles in the entire memory module, which can meet the needs of large applications and running workloads

Compared to DDR4 memory modules, DDR5 memory modules have many improvements. Firstly, the DDR5 memory module adopts PAM4 (Pulse Amplitude Modulation 4) signal encoding technology, which can transmit more data at the same frequency, thereby improving data transmission efficiency to a certain extent. Secondly, the DDR5 memory module introduces Error Correction Code (ECC) technology, making the memory more stable. In addition, DDR5 memory modules also support two working modes: synchronous timing and asynchronous timing, which can better adapt to different application scenarios. Finally, the DDR5 memory module adopts a more compact layout and space saving packaging form, which helps to reduce the size of the memory module and also has better heat dissipation performance

For the M321RBGA0B40-CWK memory module, it introduces the third-generation multi-layer stack 3DS-16 Gb DDR5 DRAM technology, which will simultaneously utilize alternative signal paths based on TSV and SCT to achieve maximum capacity. This solution can support data center use cases, such as High-performance computing (HPC), artificial intelligence (AI) and machine learning (ML)

Overall, as a high-end product under Samsung, the M321RBGA0B40-CWK memory module improves the processing efficiency of the entire system with excellent performance and efficient energy management. This memory module performs very well in High-performance computing, data analysis and other application scenarios.
Parameter Value
Brand Samsung
Model M321RBGA0B40-CWK
Memory Type DDR5-RDIMM
Storage Capacity 256GB
Storage Channel 8R x 4
Memory Transfer Speed 4800 Mbps
Working Voltage Below or equal to 1.1V
Physical Dimensions 288
Memory Large Scale Architecture 4H 3DS 16G x 4
Number of Chips 40
Applicable Scenarios High-performance computer server, processing large graphics, video rendering, virtual machine, and other scenes
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