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Back Home Product Center Memory Module or RAM (Random Access Memory) UDIMM
  • Samsung DDR4, UDIMM memory module, M378A4G43AB2-CVF, 32GB, 2933Mbps, high-speed stable performance, high-performance applications
  • Samsung DDR4, UDIMM memory module, M378A4G43AB2-CVF, 32GB, 2933Mbps, high-speed stable performance, high-performance applications

M378A4G43AB2-CVF

M378A4G43AB2-CVF Samsung DDR4 UDIMM-32GB-2R x 8-2933 Mbps 1.2 V 288- (2G x 8) x 16
Key Features
This DDR4 memory module M378A4G43AB2-CVF from Samsung has multiple outstanding features. Firstly, it has a capacity of up to 32GB, adopts the latest DDR4 technology, and combines a 2R x 8-bit architecture internally, with an ultra fast 2933MHz transmission rate, creating excellent transmission performance. Secondly, the working voltage of the memory module is only 1.2V, and it also adopts a 288 pin design, bringing higher internal processing efficiency. Finally, in terms of internal chip structure, the memory module achieves high-speed and stable data transmission through a combination of 16 2G x 8-bit chips, with excellent reliability and long-term stability. In addition, Samsung's unique internal data transfer speed and security guarantee functions can further enhance the security of memory modules, providing a higher level of protection for your device.

Datasheet: 

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This DDR4 memory module M378A4G43AB2-CVF from Samsung is an excellent high-end product. Its professional design and advanced Technological convergence are integrated to provide a perfect upgrade solution for your equipment< Br/>


Firstly, let's take a look at its capacity and technical specifications. This memory module has a huge capacity of 32GB, making it smoother to run with multiple threads. At the same time, it adopts the latest DDR4 technology and integrates a 2R x 8-bit architecture internally. At a fast transmission rate of 2933MHz, it can quickly complete storage and transmission tasks. These excellent performance features provide you with faster memory support, making your device more efficient, stable, and reliable< Br/>


Secondly, let's take a look at the working voltage and pin design of the memory module. The working voltage of this memory module is only 1.2V, which means its energy consumption is very low, saving you more battery power. In addition, the memory module adopts a 288 pin design, which has very high internal processing efficiency and provides you with faster performance support. Therefore, whether in daily work or gaming entertainment, you can achieve a smoother and more efficient user experience< Br/>


Finally, let's take a look at the internal chip structure. This memory module adopts a combination of 16 2G x 8-bit chips, providing you with better data processing performance and shorter response time. The internal chip structure design fully considers many factors, including internal signal transmission, heat dissipation, and power management, to ensure better reliability and long-term stability. At the same time, the internal data transmission speed and data protection function are Samsung's unique technological advantages, which can greatly improve the security of memory modules, providing more comprehensive protection for your device< Br/>


Overall, M378A4G43AB2-CVF is a highly competitive DDR4 memory module with clear performance characteristics. Its fast transmission rate, low power consumption, and stability bring you an unprecedented user experience. This memory module not only meets your high-end device upgrade needs, but also creates a smoother, more efficient, and stable user experience. If you are looking for an excellent memory module, consider M378A4G43AB2-CVF, which will be your best choice.
Parameter Description
Product Name M378A4G43AB2-CVF
Manufacturer Samsung
Capacity 32GB
Type DDR4 UDIMM
Rank 2Rx8
Speed 2933 Mbps
Voltage 1.2V
Pin Count 288
Number of Chips per Module 16
Chip Size 2G x 8
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