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Samsung releases Gen5 SSD: Performance uation and application advantages of two PM1743 and PM9D3a models

With the rapid development of big data, cloud computing, and 5G technology, the demand for data computing and efficient storage is constantly increasing. As a leading global supplier of storage device technology, Samsung has officially released the PM9D3a solid-state drive. As a cutting-edge PCIe Gen5.0 NVMe SSD, the PM9D3a provides unparalleled performance and energy efficiency for enterprise servers and multi-core processing data systems. With Samsung's eighth generation 3D V-NAND technology, the PM9D3a can achieve sequential read and write speeds of 12000MB/s and 6800MB/s, respectively. Its capacity of up to 15.36TB and diverse specification options ensure that it can meet the storage needs of various data centers. The new generation PM9D3a not only improves performance, but also helps data centers reduce operating costs and effectively address environmental challenges through improved heat dissipation and power efficiency design. This SSD is an ideal choice for adapting to AI, machine learning, and large-scale data processing, ushering in a new era of data storage.

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By utilizing InfiniBand routers, InfiniBand Long Distance Connectivity (NVIDIA MetroX®-2), and InfiniBand to Ethernet gateway systems (NVIDIA Skyway™), InfiniBand systems can deliver exceptional scalability and subnet isolation capabilities. When needed, the latter can efficiently and scalably connect high-performance, low-latency InfiniBand data centers to external Ethernet infrastructure, such as Ethernet storage.
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Shenzhen Saiteng Electronics Debuts at CDCE2024 | New Breakthrough in Data Center and Cloud Computing Field
Shenzhen Saiteng Electronics Co., Ltd. made a wonderful appearance at the CDCE2024 International Data Center and Cloud Computing Industry Exhibition, focusing on computing power and data center solutions. The highlights of the exhibition include the display of enterprise level server components, participation in technical forums, and multi-party cooperation negotiations. Explore cutting-edge technology and unlock the future of cloud computing!
We sincerely invite you to attend the 2024 CDCE Data Center and Cloud Computing Industry Exhibition to help the new generation of intelligent computing centers build an AI era innovation platform.
As an annual industry event, CDCE2024 International Data Center and Cloud Computing Exhibition will not only showcase full industry chain technologies and products such as computing power centers, new data center infrastructure, ICT equipment, liquid cooling, cloud computing, network information security, and the Internet of Things, but also bring a series of exciting forums to present a visual feast covering the entire data center industry chain.

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Back Home Product Center Memory Module or RAM (Random Access Memory) ECC DIMM

M324R2GA3BB0-CQK

M324R2GA3BB0-CQK, Samsung DDR5, ECCUDIMM, 16GB, 1Rx84800Mbps, 1.1V, 288 (2Gx8) x10

Key Features

M324R2GA3BB0-CQK is a DDR5 memory module launched by Samsung, which has extremely high transmission speed and large storage capacity. With the support of ECC technology, it ensures high reliability and stability of data transmission. It also has low power consumption and excellent heat dissipation, providing high-speed, reliable, and stable data transmission support for high-performance computer systems.

Datasheet:

Overview
Specifications
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Driver
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High speed transmission: This memory module has a very high transmission speed of 4800Mbps, which is more than 50% faster than traditional DDR4 memory modules, greatly improving data transmission efficiency.
High capacity: The memory module has a capacity of 16GB, which is sufficient for most application scenarios, such as large-scale computer games or video editing software.
ECC function: This memory module supports ECC technology, which can detect and correct individual bit errors, improving the reliability and stability of data transmission.
Low power consumption: The working voltage of the memory module is only 1.1V, which is lower than the 1.2V of the DDR4 memory module and can reduce energy consumption and heat generation.
Efficient heat dissipation: The memory module adopts high-quality heat dissipation fins, which improves the stability and heat dissipation effect of the memory module.

Specifications	Detailed Information
Model	M324R2GA3BB0-CQK
Memory Capacity	16GB
Memory Frequency	4800Mbps
Data Bit Width	288
Working Voltage	1.1V
Memory Chip	2G x 8 (288pin)
Interface Type	ECC UDIMM
Architecture	1Rx8