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Back Home Product Center Memory Module or RAM (Random Access Memory) ECC DIMM
  • Samsung DDR4 memory module, ECC-SODIMM, M474A2K43DB1-CWE, 16GB, 3200Mbps, 1.2V.
  • Samsung DDR4 memory module, ECC-SODIMM, M474A2K43DB1-CWE, 16GB, 3200Mbps, 1.2V.

M474A2K43DB1-CWE

M474A2K43DB1-CWE, Samsung DDR4, ECC-SODIMM, 16GB, 2Rx83200Mbps, 1.2V, 260 (1Gx8) x18
Key Features
M474A2K43DB1-CWE is a high-performance DDR4 memory module equipped with up to 16GB of memory capacity, a 2Rx8 architecture, and a speed of up to 3200-Mbps. It achieves excellent error correction capabilities through ECC-SODIMM. It uses 260 (1Gx8) x18 pins and a standard 1.2V voltage, and can be used in various high load applications, including virtualization, Big data analysis and machine learning.

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M474A2K43DB1-CWE is a high-performance DDR4 memory module that provides powerful performance and reliability for PCs, laptops, and other applications. This product is equipped with up to 16GB of memory capacity, 2Rx8 architecture, and a speed of 3200Mbps. It adopts ECC-SODIMM error correction technology, which can greatly improve the system's error correction ability& Nbsp< Br/>


Memory is the most basic and critical component in a computer, and it is also one of the essential hardware devices for a computer. DDR4 memory modules are a type of memory that can be used to improve computer performance to a whole new level. DDR4 memory has a higher sampling rate and lower voltage loss compared to DDR3 memory. These features collectively improve the throughput and response speed of DDR4 memory, and enable more efficient utilization of computer processors and other components to complete tasks< Br/>


The main feature of M474A2K43DB1-CWE is that it adopts a 2Rx8 architecture. This architecture means that there are two recorders on the memory module, each with 8 main memory chips. This configuration enables the memory module to read and write two sets of data at the same time, thus improving the Memory bandwidth. In addition, the memory module also adopts ECC-SODIMM error correction technology, which helps to check and correct bit errors in memory, improving the stability and reliability of application program operation< Br/>


The M474A2K43DB1-CWE is an ideal choice for users who need to perform high load computing such as virtualization operations, Big data analysis, and machine learning. Its 16GB memory capacity is sufficient to handle applications that require a large amount of memory for these tasks, and the 2Rx8 architecture ensures fast and efficient data read and write speeds. In addition, its high speed of 3200Mbps enables the memory module to quickly perform memory operations and enhance the system's response speed& Nbsp< Br/>


In summary, M474A2K43DB1-CWE is a high-performance and highly reliable DDR4 memory module suitable for various computing needs. It adopts ECC-SODIMM technology to achieve excellent error correction capabilities, and the 2Rx8 architecture enhances data read and write speeds, enabling efficient completion of various tasks. Its memory capacity of up to 16GB, standard 260 (1Gx8) x18 pin count, and 1.2V voltage make it a recommended DDR4 memory product.
Model M474A2K43DB1-CWE
Memory Capacity 16GB
Technology DDR4
Architecture 2Rx8
Rate 3200 Mbps
ECC Technology Supports ECC-SODIMM
Voltage 1.2V
Pin Count 260 (1Gx8) x18
Application PC, Laptop, etc
Characteristics Excellent performance and reliability, suitable for various high load applications
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