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Samsung releases Gen5 SSD: Performance uation and application advantages of two PM1743 and PM9D3a models

With the rapid development of big data, cloud computing, and 5G technology, the demand for data computing and efficient storage is constantly increasing. As a leading global supplier of storage device technology, Samsung has officially released the PM9D3a solid-state drive. As a cutting-edge PCIe Gen5.0 NVMe SSD, the PM9D3a provides unparalleled performance and energy efficiency for enterprise servers and multi-core processing data systems. With Samsung's eighth generation 3D V-NAND technology, the PM9D3a can achieve sequential read and write speeds of 12000MB/s and 6800MB/s, respectively. Its capacity of up to 15.36TB and diverse specification options ensure that it can meet the storage needs of various data centers. The new generation PM9D3a not only improves performance, but also helps data centers reduce operating costs and effectively address environmental challenges through improved heat dissipation and power efficiency design. This SSD is an ideal choice for adapting to AI, machine learning, and large-scale data processing, ushering in a new era of data storage.

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Shenzhen Saiteng Electronics Debuts at CDCE2024 | New Breakthrough in Data Center and Cloud Computing Field
Shenzhen Saiteng Electronics Co., Ltd. made a wonderful appearance at the CDCE2024 International Data Center and Cloud Computing Industry Exhibition, focusing on computing power and data center solutions. The highlights of the exhibition include the display of enterprise level server components, participation in technical forums, and multi-party cooperation negotiations. Explore cutting-edge technology and unlock the future of cloud computing!
We sincerely invite you to attend the 2024 CDCE Data Center and Cloud Computing Industry Exhibition to help the new generation of intelligent computing centers build an AI era innovation platform.
As an annual industry event, CDCE2024 International Data Center and Cloud Computing Exhibition will not only showcase full industry chain technologies and products such as computing power centers, new data center infrastructure, ICT equipment, liquid cooling, cloud computing, network information security, and the Internet of Things, but also bring a series of exciting forums to present a visual feast covering the entire data center industry chain.

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Back Home Product Center Memory Module or RAM (Random Access Memory) LRDIMM

M386ABG40M50-CYF

M386ABG40M50-CYF, Samsung DDR4, LRDIMM, 256GB, 8Rx42933Mbps, 1.2V, 288, (4H3DS16GX4) x36

Key Features

This Samsung M386ABG40M50-CYF memory module has multiple unique features and features, including:
1. Large capacity design: The memory capacity can reach up to 256GB, meeting the needs of large capacity storage.
2. High transmission rate: The transmission rate can reach up to 4333Mbps, bringing a faster computing experience.
3. Low power consumption: Low power consumption during operation, maintaining stable memory operation.
4. 8Rx4 architecture design: The memory module adopts an 8Rx4 architecture design to improve the efficiency of memory data transmission.
5. Excellent physical design: With good physical design and heat dissipation performance, it can ensure long-term and high-intensity memory operations.
6. Multiple application fields: applicable to High-performance computing, cloud computing, Big data, artificial intelligence, scientific research, virtualization, enterprise applications and other fields.
Based on the above characteristics, the M386ABG40M50-CYF memory module not only has large storage capacity and high transmission rate, but also has characteristics such as low power consumption, high efficiency, and high stability. It is a highly practical and high-performance memory product.

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Relative Products

M386ABG40M50-CYF is a DDR4 LRDIMM memory module launched by Samsung. The memory capacity is 256GB, designed with an 8Rx4 architecture and a transmission rate of up to 4333Mbps. This product has the characteristics of low power consumption, excellent physical design, and outstanding heat dissipation performance, and can run stably for long periods of time with high intensity computing. In addition, M386ABG40M50-CYF memory module supports cloud computing, Big data, artificial intelligence and other High-performance computing fields, and is also suitable for scientific research, virtualization and enterprise applications. Its specification parameter is 1.2V, 288 pins, (4H3DS16GX4) x36. As one of the representatives of Samsung's high-performance memory products, the M386ABG40M50-CYF memory module will bring users a faster, more stable, and more efficient computing experience.