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The first batch of sample testing resources for STES cooperation is coming hot! SOLIDIGM P5430 TLC new product is officially unveiled.

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Back Home Product Center Memory Module or RAM (Random Access Memory) LRDIMM

M386ABG40M50-CYF

M386ABG40M50-CYF, Samsung DDR4, LRDIMM, 256GB, 8Rx42933Mbps, 1.2V, 288, (4H3DS16GX4) x36

Key Features

This Samsung M386ABG40M50-CYF memory module has multiple unique features and features, including:
1. Large capacity design: The memory capacity can reach up to 256GB, meeting the needs of large capacity storage.
2. High transmission rate: The transmission rate can reach up to 4333Mbps, bringing a faster computing experience.
3. Low power consumption: Low power consumption during operation, maintaining stable memory operation.
4. 8Rx4 architecture design: The memory module adopts an 8Rx4 architecture design to improve the efficiency of memory data transmission.
5. Excellent physical design: With good physical design and heat dissipation performance, it can ensure long-term and high-intensity memory operations.
6. Multiple application fields: applicable to High-performance computing, cloud computing, Big data, artificial intelligence, scientific research, virtualization, enterprise applications and other fields.
Based on the above characteristics, the M386ABG40M50-CYF memory module not only has large storage capacity and high transmission rate, but also has characteristics such as low power consumption, high efficiency, and high stability. It is a highly practical and high-performance memory product.

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Relative Products

M386ABG40M50-CYF is a DDR4 LRDIMM memory module launched by Samsung. The memory capacity is 256GB, designed with an 8Rx4 architecture and a transmission rate of up to 4333Mbps. This product has the characteristics of low power consumption, excellent physical design, and outstanding heat dissipation performance, and can run stably for long periods of time with high intensity computing. In addition, M386ABG40M50-CYF memory module supports cloud computing, Big data, artificial intelligence and other High-performance computing fields, and is also suitable for scientific research, virtualization and enterprise applications. Its specification parameter is 1.2V, 288 pins, (4H3DS16GX4) x36. As one of the representatives of Samsung's high-performance memory products, the M386ABG40M50-CYF memory module will bring users a faster, more stable, and more efficient computing experience.