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Back Home Product Center Memory Module or RAM (Random Access Memory) SODIMM
  • Samsung DDR4, SODIMM memory module, M471A2K43EB1-CWE, 16GB, 2Rx8 architecture, 3200Mbps transmission rate, 1.2V working voltage.
  • Samsung DDR4, SODIMM memory module, M471A2K43EB1-CWE, 16GB, 2Rx8 architecture, 3200Mbps transmission rate, 1.2V working voltage.

M471A2K43EB1-CWE

M471A2K43EB1-CWE, Samsung DDR4, SODIMM, 16GB, 2Rx83200Mbps, 1.2V, 260, (1Gx8) x16
Key Features
Samsung DDR4 memory module M471A2K43EB1-CWE is a SODIMM type memory module with a capacity of 16GB. It adopts a 2Rx8 architecture, with a bandwidth of up to 3200Mbps and a voltage of 1.2V. This memory module has high execution efficiency and fast running speed, which can meet high-intensity computing tasks and game requirements. In addition, the memory module adopts a structure composed of 16 1Gx8 chips, which can significantly improve the performance of the system. It is also a low voltage memory, and its excellent energy-saving performance makes it widely used in mobile devices such as laptops, while also being more environmentally friendly and energy-saving. In summary, M471A2K43EB1-CWE is a high-performance, stable, and reliable memory module that can meet the needs of multiple scenarios.

Datasheet: 

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M471A2K43EB1-CWE is a high-performance Samsung DDR4 memory module that adopts the SODIMM specification and is suitable for devices such as laptops, desktops, and workstations, providing excellent memory processing performance. The memory module has a capacity of 16GB and adopts a 2Rx8 memory chip organizational structure. The bandwidth is up to 3200Mbps, and the operating voltage is 1.2V. It has lower power consumption and better performance, while also being more environmentally friendly and energy-saving< Br/>


M471A2K43EB1-CWE adopts 16 1Gx8 recording memory chips, which is also a true dual channel memory module. Its data transmission speed is extremely fast, and it can complete a large number of calculation operations in an ultra short time, improving system performance and operational efficiency. In addition, using 16 1Gx8 storage particles, its reading speed will also be faster, which can support more running memory, ensure system stability and high-speed operation, and meet large-scale and complex computing needs< Br/>


At the same time, the memory module also adopts the DDR4 standard, and its internal structure has been optimized, further improving its performance. Compared to DDR3, DDR4 has a higher main frequency, faster data transmission speed, lower latency, and significantly reduces power consumption. In addition, DDR4 memory modules have higher density and larger capacity, providing more storage space while being more stable and reliable< Br/>


The operating voltage of M471A2K43EB1-CWE is 1.2V, which can significantly reduce energy consumption and heat output, while also helping to extend the service life of the system. This low-power characteristic is also one of the important reasons why this memory module is suitable for use on mobile devices< Br/>


At the same time, M471A2K43EB1-CWE also supports ECC (Error Correcting Code) error correction, which can improve the reliability of memory modules and play a crucial role in protecting data and extending the lifespan of memory modules. This technology can detect errors and faults during data transmission, and correct these problems to ensure the Data integrity and operation stability of the system< Br/>


In addition, the memory module also supports Intel XMP (Extreme Memory Profile) overclocking function, which can increase the memory frequency to a higher level according to user needs. Users can make changes through BIOS settings to make the memory module run at higher frequencies and better performance states< Br/>


In summary, M471A2K43EB1-CWE is a high-performance, stable, and reliable memory module suitable for various computing tasks and demand scenarios, which can help users improve system efficiency and performance. Whether in application scenarios such as multitasking, complex computing, or large-scale games, this memory module can handle and achieve seamless data transmission and efficient operation. At the same time, it is also a low-power, environmentally friendly memory module that can better save energy, reduce emissions, and protect the environment for users during long-term use.
Parameter Description
Model M471A2K43EB1-CWE
Brand Samsung
Type DDR4
Packaging Type SODIMM
Capacity 16GB
Number of Chips/Chipsets 2Rx8
Transmission Speed 3200Mbps
Working Voltage 1.2V
Organization Structure (1Gx8) x16
Pin Count 260
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