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Back Home Product Center Memory Module or RAM (Random Access Memory) SODIMM

M471A4G43AB1-CWE

M471A4G43AB1-CWE, Samsung DDR4, SODIMM, 32GB, 2Rx83200Mbps, 1.2V, 260 (2Gx8) x16

Key Features

32GB capacity: M471A4G43AB1-CWE is a high capacity memory module suitable for users with high memory demands, such as high-definition video production, 3D modeling, and large-scale games.
DDR4 architecture: DDR4 is currently the latest memory technology with higher frequencies and lower energy consumption. Adopting this architecture in M471A4G43AB1-CWE can greatly improve system response speed.
SODIMM size: M471A4G43AB1-CWE adopts SODIMM size, suitable for compact devices such as laptops and mini PCs. It can provide powerful memory support.
2Rx8: M471A4G43AB1-CWE adopts a 2Rx8 architecture (with 2 memory particles and 8 banks per particle), which can improve data transmission performance and stability.
3200Mbps rate: M471A4G43AB1-CWE has a transmission rate of 3200Mbps, which can greatly accelerate data transmission speed, improve application response speed and system performance.
1.2V voltage: M471A4G43AB1-CWE adopts a low voltage of 1.2V, which can greatly reduce power consumption and extend the battery life of the device.
260 (2Gx8) x16 pin: M471A4G43AB1-CWE adopts 260 (2Gx8) x16 pin, compatible with standard SODIMM interface, suitable for most laptops and mini PCs and other devices.

Datasheet:

Overview
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M471A4G43AB1-CWE is a high-performance DDR4 memory module launched by Samsung, providing users with a capacity of 32GB to meet their high capacity memory needs.

The memory module adopts a SODIMM size, making it suitable for laptops, mini PCs, and other compact devices. At the same time, M471A4G43AB1-CWE also adopts the DDR4 architecture, which is one of the most advanced memory technologies currently available, with higher rates and lower power consumption, as well as better data transmission performance and stability.

The 2Rx8 architecture of M471A4G43AB1-CWE means it has two memory particles, each with 8 banks. This design can improve the performance and stability of data transmission, so that users can have a smoother experience in Computer multitasking, large-scale games or high-definition video processing. In addition, M471A4G43AB1-CWE also adopts a transmission rate of 3200Mbps, which makes its data transmission speed faster, significantly improving application response speed and system performance.

In addition, the M471A4G43AB1-CWE also has a low voltage design of 1.2V. This design can greatly reduce the power consumption of memory modules and extend the battery life of devices. In addition, the memory module adopts a 260 (2Gx8) x16 pin interface, suitable for most laptops and mini PCs and other devices, making it easy for users to install and use.

In summary, M471A4G43AB1-CWE is a high-performance, high-capacity, and low-power memory module suitable for various applications with high memory requirements, such as high-definition video production, 3D modeling, large-scale games, etc. Its fast data transmission speed, better data transmission performance and stability, and low voltage design make it the preferred memory module for users to improve work efficiency and quality.

Brand	Samsung
Model	M471A4G43AB1-CWE
Memory Capacity	32GB
Memory Type	DDR4 SDRAM
Interface Type	SODIMM
Architecture	2Rx8
Main Frequency	3200MHz
Voltage	1.2V
Stored Particles	260 (2Gx8) x 16
Size	Height 67.60mm, Length 30mm, Width 3.80mm
Mainstream Program	40 nanometers
Maximum Bandwidth	51.2GB/s
Special Functions	ECC technology for load balancing and fault tolerance