M393A1K43DB1-CVF
M393A1K43DB1-CVF, Samsung DDR4-RDIMM, 8 GB, 1R x 82933-Mbps1.2V, 288, (1Gx8) x9
Key Features
High speed memory: The frequency of this memory module can reach 2933MHz, making it suitable for processing large, high-speed executing applications. This high-speed memory module can provide excellent performance under various high load conditions. 1R x 8 architecture The 1R x 8 architecture of M393A1K43DB1-CVF is a memory architecture of one side cells, which makes it very different from other Memory module. This architecture makes it easier to configure and upgrade memory modules. Low power consumption: The Memory module can work normally with a low voltage of 1.2V, which is more energy-saving than the traditional DDR3 memory. This optimizes the power consumption and thermal efficiency of the entire system, reduces energy consumption, while maintaining excellent performance and stability. High density capacity: With a memory capacity of up to 8GB, it can easily meet the memory requirements of high-performance, high-bandwidth data centers and large applications. The high-density capacity also allows the memory product to scale to a larger memory capacity, improving system scalability and performance. High reliability: The M393A1K43DB1-CVF memory module adopts ECC technology, which can detect and repair errors in memory, improve memory stability and reliability, and reduce interrupts and errors generated during the calculation process. Wide adaptability: the Memory module can work in a variety of operating environments, including extreme conditions such as high altitude, high temperature, low temperature and high humidity, making it an ideal choice for science, engineering, data and network operations.
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