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Back Home Product Center Solid State Drive (SSD) M.2
  • Samsung, MZVL21T0HCLR-00 $00/07, PM9a1 M.2 1TB, PCIE NVME Solid-state drive,
  • Samsung, MZVL21T0HCLR-00 $00/07, PM9a1 M.2 1TB, PCIE NVME Solid-state drive,

MZVL21T0HCLR-00$00/07

Samsung MZVL21T0HCLR-00 $00/07 PM9a1 M.2 1TB PCIE NVME Solid-state drive
Key Features
PM9A1 adopts the standard NVMe protocol M.2 interface and single sided PCB board design. Elpis new master+the new sixth generation V-NAND 3D TLC new flash memory particles support PCI-E 4.0 protocol, Backward compatibility PCIE-3.0 standard, cache part, Samsung's own LPDDR4 particles.

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PM9A1 adopts the standard NVMe protocol M.2 interface and single sided PCB board design. Elpis new master+the sixth generation V-NAND new flash memory is Backward compatibility with PCIE-3.0 standard< Br/>


Samsung's new Elpis master designed for the PCIE4.0 protocol. Elpis originates from Greek and has a Chinese pronunciation" Erpius&rquo;, The literal translation in Chinese is&quo; Goddess of Hope;, From the naming of the main controller, one can feel the high expectations and expectations placed by Samsung brand storage for this 980PRO PCIE4.0 SSD. Technically, the Elpis master adopts Samsung's self-developed new 8nm process technology, which fully supports the PCIE4.0 protocol and can meet the needs of next-generation development and computing. The new Elpis master supports 128 queues for parallel work and 128 I/O queues for synchronous data processing< Br/>


In terms of particles, Samsung has launched a brand new sixth generation V-NAND flash memory particle. According to the official introduction, the sixth generation V-NAND particle fully utilizes Samsung's unique technology in the manufacturing process; Channel Hole Etching; By establishing a conductive chip stack consisting of over 100 layers and vertically perforating from top to bottom, a uniform three-dimensional charge well flash memory (CTF) unit is formed, thereby achieving an increase of approximately 40% in storage units on the basis of a 9x layer single stack structure. Compared with the previous generation of products, the performance has been improved by more than 10%, while the power consumption has been reduced by more than 15%< Br/>


The PCB backplane is bare and has nothing, which means it has been designed with a single side from the beginning. This is also thanks to the doubled capacity of NAND's single chip, allowing even large capacity models to fit on one side. In addition, the heat generation of solid particles in PCI-E4.0 is not small, and the heat dissipation of the double-sided design will also be a problem< Br/>






Note: Same as SAMSUNG; All images or videos related to the product (in whole or in part) are copyrighted by SAMSUNG  Owned by Corporation.
Parameter Value
Product Position MZVL21T0HCLR-00$00/07 - OEM
Storage Capacity 1TB
Interface Type M.2 PCIe Interface
Form Factor 1.8 inch
Flash Architecture TLC Triple-Level Cell
Performance Parameters  
Read Speed 7000MB/s
Write Speed 5000MB/s
Other Parameters  
Dimensions 80.15×22.15×2.38mm
Operating Temperature 0-70℃
Storage Temperature -40-85℃
DWPD (Drive Writes Per Day) 300TBW
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