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Samsung releases Gen5 SSD: Performance uation and application advantages of two PM1743 and PM9D3a models

With the rapid development of big data, cloud computing, and 5G technology, the demand for data computing and efficient storage is constantly increasing. As a leading global supplier of storage device technology, Samsung has officially released the PM9D3a solid-state drive. As a cutting-edge PCIe Gen5.0 NVMe SSD, the PM9D3a provides unparalleled performance and energy efficiency for enterprise servers and multi-core processing data systems. With Samsung's eighth generation 3D V-NAND technology, the PM9D3a can achieve sequential read and write speeds of 12000MB/s and 6800MB/s, respectively. Its capacity of up to 15.36TB and diverse specification options ensure that it can meet the storage needs of various data centers. The new generation PM9D3a not only improves performance, but also helps data centers reduce operating costs and effectively address environmental challenges through improved heat dissipation and power efficiency design. This SSD is an ideal choice for adapting to AI, machine learning, and large-scale data processing, ushering in a new era of data storage.

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Back Home Product Center Solid State Drive (SSD) M.2

MZVLB256HBHQ-00000

Samsung MZVLB256HBHQ-00000 PM981A M.2 256GB PCIE NVME Solid-state drive

Key Features

Further improvement of SSD performance PM981a can provide excellent SSD functionality for PCs. It supports PCIe ® Interface standard (up to 4 channels) and TurboWrite technology, with faster sequential read/write speeds, even in NVMe ™ Low power consumption can also achieve fast performance in power saving mode.

Datasheet:

Overview
Specifications
Download
Driver
Relative Products

Further improvement in SSD performance

PM981a can provide excellent SSD functionality for PCs. It supports PCIe interface standards (up to 4 channels) and TurboWrite technology, with faster sequential read/write speeds, enabling fast performance even when using lower power consumption in NVMe power saving mode< Br/>

High stability 3D NAND particles, 96 layer 3D NAND flash memory technology, effectively maintaining the high-speed operation and stability of PM981a. Dynamic caching with low latency is smoother, with an external dual channel DRAM cache, significantly improving 4K random read and write performance and reducing SSD access latency. Support NCQ full speed instruction queue and TRIM instruction. The PM981a adopts a new enhanced Phoenix controller, with a maximum random reading speed of 3500MB/s. The maximum random write speed can reach 3000MB/s.

Supports nvme protocol and powerful configuration of PM981a. Suitable for high-end motherboards, game books, ultrabooks, NUC and other devices with PCle M.2 interfaces< Br/>

Note: Same as SAMSUNG; All images or videos related to the product (in whole or in part) are copyrighted by SAMSUNG Owned by Corporation.

Parameter	Value
Product Position	MZVLB256HBHQ-00000 / OEM
Storage Capacity	256GB
Interface Type	M.2 PCIe Interface
Flash Architecture	TLC Triple-Level Cell
Cache	512MB
Controller Chip	Samsung PHOENIX Controller
Performance Parameters
Read Speed	3400MB/s
Write Speed	2400MB/s
Mean Time Between Failures (MTBF)	3 million hours
Other Parameters
Dimensions	22×80mm
Weight	100g
Operating Temperature	0-70℃
Storage Temperature	-45-85℃