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Samsung announced that it has successfully developed a new SSD PM9A3 based on SNIA's E1. S exterior design. PM9A3 supports the NVMe protocol, PCIe Gen 4 interface specification, and adopts Samsung's sixth generation V-NAND (128 layer 3D NAND), mainly targeting the data center server market.

The PM9A3 has a more optimized overall size, which can effectively improve space utilization and support the PCIe 4 interface specification, significantly improving transmission speed. The E1. S exterior design combines the main advantages and optimal storage design of a 2.5-inch U2 SSD and 1U server. Compared to U2 SSDs, E1. S SSDs enable hardware engineers to add more SSDs to each rack, freeing up more space and saving costs. In terms of capacity, the new PM9A3 SSD will range from 960 GB to 7.68 TB.

PM9A3 U2 supports PCIe 4.0, a product specifically designed by Samsung Semiconductor for Chinese data center customers. PM9A3 U.2 adopts Samsung's sixth generation 3D flash memory (V-NAND) technology, based on the NVMe protocol, fully complies with the open computing project NVMe cloud Solid-state drive specification, and can provide high-level solutions in terms of performance, power efficiency, reliability and security according to the needs of the data center.

The 4K steady-state random read performance of PM9A3 U2 is 1100K IOPS, and the sequential read speed is 6900MB/s, which is 2.2 times and 2.16 times higher than the previous generation product PM983 U2, respectively. In addition, in terms of sequential write performance of 304MB/s per watt, compared to the previous generation, the energy efficiency ratio has improved by 61%


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