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Samsung releases Gen5 SSD: Performance uation and application advantages of two PM1743 and PM9D3a models

With the rapid development of big data, cloud computing, and 5G technology, the demand for data computing and efficient storage is constantly increasing. As a leading global supplier of storage device technology, Samsung has officially released the PM9D3a solid-state drive. As a cutting-edge PCIe Gen5.0 NVMe SSD, the PM9D3a provides unparalleled performance and energy efficiency for enterprise servers and multi-core processing data systems. With Samsung's eighth generation 3D V-NAND technology, the PM9D3a can achieve sequential read and write speeds of 12000MB/s and 6800MB/s, respectively. Its capacity of up to 15.36TB and diverse specification options ensure that it can meet the storage needs of various data centers. The new generation PM9D3a not only improves performance, but also helps data centers reduce operating costs and effectively address environmental challenges through improved heat dissipation and power efficiency design. This SSD is an ideal choice for adapting to AI, machine learning, and large-scale data processing, ushering in a new era of data storage.

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Back Home Product Center Solid State Drive (SSD) U.2

MZQLB3T8HALS-00007

Samsung MZQLB3T8HALS-00007 PM983 3.84TB U.2 NVME Solid-state drive SSD

Key Features

Samsung SSD PM983 is a high-performance enterprise class U.2 NVMe Solid-state drive with high-speed read/write and data storage functions, which is very suitable for enterprise level application scenarios such as data centers. PM983 Solid-state drive adopts reliable V-NAND technology, with excellent durability and high-speed data processing capability. In addition, the read/write speed of PM983 Solid-state drive is more than 8 times that of traditional mechanical hard disk, greatly improving data transmission efficiency and responsiveness. If you need high-performance data center hard drives, PM983 is one of your top choices.

Datasheet:

Overview
Specifications
Download
Driver
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Samsung; U. 2 NVME Solid-state drive is a high-performance SSD designed for enterprise use. It uses NVMe interface and U.2 interface, V-NAND flash memory technology and Memory controller independently developed by Samsung, and has excellent performance and reliability.

The Solid-state drive adopts PCIe Gen 3.0 x4 interface, and is equipped with high-speed multi-channel data transmission technology. It can achieve a sequential read speed of up to 3500MB/s and a sequential write speed of 3000MB/s, as well as a random read and write speed of 630K IOPS and 140K IOPS, respectively, providing enterprise users with excellent data processing capabilities and ultimate user experience.

Samsung; U. 2 NVME Solid-state drive adopts V-NAND flash memory technology independently developed by Samsung, and adopts a new 32 layer vertical structure design, which can increase the storage density of each storage unit to twice the original, thus greatly increasing the storage capacity, and also can provide up to 10 times the durability, effectively extending the service life of Solid-state drive.

In addition, this Solid-state drive also uses Samsung's new SSD central processor. Through specially optimized algorithms and underlying control logic, it can monitor and manage data streams in real time, avoid wear balance problems, improve the I/O performance of SSDs, and predict possible problems of SSDs, thus ensuring real data security.

Parameter	Value
Hard Drive Model	MZQLB3T8HALS-00007
Capacity	3.84 TB
Interface Type	U.2 NVMe
Reading Speed	Up to 3000 MB/s
Write Speed	Up to 2200 MB/s
Random Read (4KB QD32)	Up to 800000 IOPS
Random Write (4KB QD32)	Up to 200000 IOPS
Mean Time Between Failures	2000000 hours
Bad Block Management	Support
TRIM Support	Support
S.M.A.R.T. Support	Support
Encryption	Supports AES 256-bit hardware encryption