12312312
  • HK STES TECHNOLOGY CO., LIMITED
  • amazon
  • newegg
  • HK STES TECHNOLOGY CO., LIMITED
  • HK STES TECHNOLOGY CO., LIMITED
Back Home Product Center Solid State Drive (SSD) M.2
  • Samsung, MZ1LB3T8HMLA-00007, PM983,3.84TB, M.222110, NVME Solid-state drive
  • Samsung, MZ1LB3T8HMLA-00007, PM983,3.84TB, M.222110, NVME Solid-state drive

MZ1LB3T8HMLA-00007

Samsung MZ1LB3T8HMLA-00007 PM983 3.84TB M.2 22110 NVME Solid-state drive SSD
Key Features
The Samsung SSD PM983 adopts NVMe (Non volatile Memory Expansion) interface and 3D V-NAND technology, which can provide high read and write speed and capacity density. The hard drive has a sequential read speed of up to 3200 MB/s, a sequential write speed of up to 2100 MB/s, a random read speed of up to 800000 IOPS, and a random write speed of up to 70000 IOPS. These powerful performance can greatly improve the efficiency of mobile office and data centers.

Datasheet: 

  • Overview
  • Specifications
  • Download
  • Driver
  • Relative Products
Samsung SSD PM983 (M.2) is a high-performance, high-capacity storage device designed for data center, cloud computing, virtualization, High-performance computing, artificial intelligence and other applications. It adopts the PCIe 3.0 x4 interface and NVMe 1.3 protocol, supports hardware encryption and end-to-end protection, and is equipped with Samsung's proprietary V-NAND flash memory and low latency controller, which can significantly improve system throughput, IOPS, response speed, and reliability, providing a reliable data storage solution for enterprise applications.
The main features of Samsung SSD PM983 (M.2) include:

1. High performance: Adopting PCIe 3.0 x4 interface and NVMe 1.3 protocol, it has a read speed of up to 3.5GB/s and a write speed of 2.7GB/s, while providing up to 480000 IOPS, which can greatly improve the data transmission and access capabilities of the data center.

2. High capacity: 960/1.92/3.84/7.68TB and other storage capacities meet the storage needs of various data centers and enterprise applications.

3. Low latency: Equipped with Samsung's proprietary V-NAND flash memory and low latency controller, it can achieve low latency read and write operations, greatly improving the response speed and performance of the application system.

4. High reliability: Supports hardware encryption and end-to-end protection to ensure data security; Adopting Samsung's self-developed small particle V-NAND technology, the flash memory has a longer lifespan and higher data retention reliability and stability.

5. Low power consumption: Adopting the NVMe 1.3 protocol, it has the advantage of low power consumption and can bring higher performance and efficiency to enterprise level applications.
Specification Attribute
Capacity 3.84TB
Interface PCIe Gen3 x4, NVMe 1.2
Random Read IOPS Up to 700,000
Random Write IOPS Up to 450,000
Sequential Read Speed Up to 3,200MB/s
Sequential Write Speed Up to 3,000MB/s
DWPD Up to 1.3
MTTF 2,500,000 hours
TBW 3.84TB: 12,240 TBW
Wechat